If somebody can help me , or if you can give me for shure some e-mail address, please do.
I have a problem doing analysis of meander line on Si substrate in ANSYS 10
I’m working HF electromagnetic analzysis in Anszs Multiphysich.
Substrate is 760x760 micrometer, and 400micrometer hight.On top of it there is SiO2 layer of 5 micrometer of thickness, and then gos meander line whosw with is 40 micrometer and thisknes is 8 nicrometer.I cant get good S parameters wich I then use to get Q an L.
I'd tried over fifty diferent combinations of excitations and boundary conditions without succession.
If somebody can tell me what about rules for current and port excitation and boundary conditions for this particular case wich is diferent from those from HF guides in ANSYS please do.