Apr 14, 2008 | The INQUIRER
IBM alliance uses high-k/metal gate to spiff up semiconductor performance
IBM AND partners reckon they can now outperform the rest of the industry in performance and power consumption, by using high-k/metal gate on silicon manufactured at IBM's 300mm semiconductor fab in East ... via The INQUIRER
Chartered Extends Technology Development Collaboration with IBM to 22-Nanometer Process Node
“Going forward, it will be material science invention that will improve silicon performance while the collaborative model mitigates the escalating cost of technology and design and improves time to manufacture.”
Chartered Semiconductor Manufacturing today announced the extension of its joint development collaboration with IBM to include 22-nanometer bulk complementary metal oxide semiconductor technology. via Design And Reuse
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